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Ordering number : ENN8211
MCH3145 / MCH3245
MCH3145 / MCH3245
Applications
*
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
* * * * * *
Adoption of MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm). High allowable power dissipation.
Specifications ( ) : MCH3145
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings (--50)80 (--50)80 (--)50 (--)6 (--)2 (--)4 (--)400 0.8 150 --55 to +150 Unit V V V V A A mA W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz 200 420 (16)8 Ratings min typ max (--)1 (--)1 560 MHz pF Unit A A
Marking : MCH3145 : AN, MCH3245 : CS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12805EA TS IM TB-00001031 No.8211-1/5
MCH3145 / MCH3245
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10A, IE=0 IC=(--)100A, RBE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-50)80 (-50)80 (-)50 (--)6 (35)35 (200)330 (24)40 Ratings min typ (--)0.9 max (--)1.2 (-165)130 (--330)260 Unit mV V V V V V ns ns ns
Package Dimensions
unit : mm 2194A
0.25
Switching Time Test Circuit
0.3 3
0.15
PW=20s D.C.1% INPUT
IB1 OUTPUT IB2 VR 50 + 100F + 470F VCC=25V RB
2.1
1.6
RL
0.25
0.65 2.0
(Bottom view)
0.07
2
1
3
VBE= --5V
1 : Base 2 : Emitter 3 : Collector
1 2
(Top view)
0.85
IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed.
SANYO : MCPH3
--2.0 --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6
IC -- VCE
MCH3145
-0 10 mA --80
2.0
IC -- VCE
50m A
mA
--60
mA
--40
mA
--20m A
Collector Current, IC -- A
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
40
m
A
30mA
MCH3245
20mA 15mA
Collector Current, IC -- A
--10mA --8mA
--6mA
10mA 8mA 6mA
4mA
--4mA --2mA
2mA
--0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
IB=0
--1.8 --2.0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IB=0
1.8 2.0
Collector-to-Emitter Voltage, VCE -- V
IT09096
Collector-to-Emitter Voltage, VCE -- V
IT09097
No.8211-2/5
MCH3145 / MCH3245
--2.00 --1.75
IC -- VBE
MCH3145 VCE= --2V
2.00 1.75
IC -- VBE
MCH3245 VCE=2V
Collector Current, IC -- A
Collector Current, IC -- A
--1.50 --1.25
1.50 1.25 1.00 0.75 0.50 0.25 0
Ta=7 5C
25C --25C
--0.75 --0.50 --0.25 0 0 --0.2 --0.4 --0.6
--0.8
--1.0 IT09098 7
0
0.2
0.4
0.6
Ta= 75
--1.00
0.8
--25C
1.0 IT09099 2
Base-to-Emitter Voltage, VBE -- V
7 5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
Ta=75C
3
MCH3145 VCE= --2V
5
25C
--25C
Ta=75C
DC Current Gain, hFE
DC Current Gain, hFE
25C
3
2
--25C
2
100 7 5
100 7 5 0.01
3 2 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
2
3
5
7 0.1
2
3
5
C 25C
MCH3245 VCE=2V
7 1.0
3
Collector Current, IC -- A
7
IT09100 7
f T -- IC
Collector Current, IC -- A
IT09101
f T -- IC
Gain-Bandwidth Product, f T -- MHz
5
Gain-Bandwidth Product, f T -- MHz
MCH3145 VCE= --10V
5 3 2
MCH3245 VCE=10V
3
100 7 5 3 2
2
100
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
10 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
7 5
IT09102 5
Cob -- VCB
Collector Current, IC -- A
IT09103
Cob -- VCB
MCH3145 f=1MHz
MCH3245 f=1MHz
Output Capacitance, Cob -- pF
3
Output Capacitance, Cob -- pF
3
2
2
10 7 5
10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 57 IT09104
3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT09105
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
No.8211-3/5
MCH3145 / MCH3245
5 3 2
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
VCE(sat) -- IC
MCH3245 IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
MCH3145 IC / IB=10
0.1 7 5 3 2
--0.1 7 5 3 2
=7 Ta
C 5
5 --2
C
= Ta
C 25
0.01 7 5
C 75 5C --2 C 25
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
--1.0 7
IT09106 5 3
VCE(sat) -- IC
Collector Current, IC -- A
IT09107
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
MCH3145 IC / IB=20
MCH3245 IC / IB=20
2
0.1 7 5 3 2
--0.1 7 5 3 2
C 75 Ta= 5C --2 C 25
= Ta
75
C
5 --2 C 25
C
0.01 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A
3
IT09108 3
Collector Current, IC -- A
IT09109
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
MCH3245 IC / IB=10
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
MCH3145 IC / IB=10
2
2
--1.0
Ta= --25C
75C
25C
1.0
Ta= --25C
75C 25C
7
7
5
5
3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
3
IT09110 3
VBE(sat) -- IC
Collector Current, IC -- A
IT09111
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
MCH3145 IC / IB=20
MCH3245 IC / IB=20
2
--1.0
Ta= --25C
75C
25C
1.0
Ta= --25C
75C
25C
7
7
5
5
3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
IT09112
Collector Current, IC -- A
IT09113
No.8211-4/5
MCH3145 / MCH3245
7 5 3 2
ASO
ICP=4A
1m
<10s
0.9 0.8
PC -- Ta
MCH3145 / MCH3245
s 100
Collector Dissipation, PC -- W
IC=2A
M
50 s 0
Collector Current, IC -- A
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
ou
s
nt
1.0 7 5 3 2 0.1 7 5 3 2
ed
on
m 10 s
ac
10
0.01 0.01
MCH3145 / MCH3245 Ta=25C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2!0.8mm)
23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57
Collector-to-Emitter Voltage, VCE -- V
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice.
PS No.8211-5/5
DC
er
s n 0m atio er op
IT09114
am
ic
bo
ar
d
(6
00
m
m2 !
0.
8m
m
)
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
IT09115

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